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11-06-2007
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70 nm Low Noise Amplifier

Submitter: Jan Geralt Bij de Vaate
Description: This micro photograph shows the latest Low Noise Amplifier Integrated Circuit, processed this time in a research Gallium Arsenide process featuring 70 nano meter gate lenghts and a cut-off frequency of well over 250GHz. With this technology, SKADS wants to demonstrate ultra low noise figures with room temperature devices, required for the SKA aperture array concept. The chip is 1.0 x 1.5 mm. Test results will become available soon.
Copyright: Roel Witvers
 
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