|Description:|| In this presentation, an overview will be given of the QUBiC4 platform, a high-performance 0.25Ám BiCMOS production process developed at NXP Semiconductors. |
We will particularly discuss the technology choices made to reach state-off-the-art low noise performance, both at low frequency (~2GHz) and moderate to high frequency (10-40GHz).
Also a brief outlook for the next generation process will be provided, to bring the SiGe HBT performance on par with existing GaAs pHEMT technology for LNA's.
Peter Magnee and Dre van den Elshout